Citation
Usikov, A.; Shapovalova, L.; Strittmatter, A.; Johnson, N. M.; Ivantsov, V.; Syrkin, A.; Soukhoveev, V.; Scanlan, B.; Zheng, J. G.; Spiberg, P.; El-Ghoroury, H. Structural characterization of thick (1122) GaN layers grown by HVPE on m-plane sapphire. physica status solidi (a). 2010 June; 207 (6): 1295-1298.
Abstract
This paper reports structural characterization of thick equation image-oriented GaN layers by means of XRD, TEM, and micro- CL. The semi-polar equation image GaN layers were grown on m-plane sapphire substrates by HVPE. Their structural quality improved with thickness. Threading dislocation density of 3108cm2 and stacking faults density of 4104cm1 were measured at the surface of 20m thick equation image GaN layers. The semi-polar GaN layers were used as template substrates to grow InGaN/GaN MQW heterostructures by MOCVD that demonstrated optically pumped lasing at 500 nm wavelength. The results demonstrate the longest wavelength yet reported for a photo-pumped laser on template substrates.
