-
Single-Frequency Violet and Blue Laser Emission from AlGaInN Photonic Integrated Circuit Chips
Chip-based, single-frequency and low phase-noise integrated photonic laser diodes emitting in the violet (412 nm) and blue (461 nm) regime are demonstrated.
-
Transient electronics based on frangible stress-engineered glass substrates
We present an approach to transience electronics where transience is achieved by fracturing electronic components into small pieces and widely dispersing the fragments over a large area.
-
Enhanced vertical and lateral hole transport in high aluminum-containing AlGaN for deep-UV light emitters
We report improved p-type conductivity in AlGaN:Mg superlattice (SL) cladding layers designed for deep ultraviolet light emitting devices operating at wavelengths down to 255 nm.
-
Studies of hole transport in Mg-doped AlGaN layers for deep-ultraviolet light emitters
We have explored a number of designs for the p-layer for DUV light emitters and will report the results.
-
Optically pumped UV lasers grown on bulk AlN substrates
Sub-300nm optically pumped ultraviolet lasers were realized on low-defect-density (0001) AlN substrates fabricated from single crystalline AlN boules.
-
Deep UV AlGaN lasers
In this presentation, we report recent progress on the development towards sub-300 nm laser diodes by using high-quality bulk AlN substrates.
-
Sub-300 nm AlGaN lasers on bulk AlN substrates
We describe recent progress on the development of sub-300 nm lasers at the Palo Alto Research Center (PARC).
-
Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
Experimental results are presented that illustrate the phenomenon for nitride LEDs grown on sapphire and on bulk AlN.
-
Pseudomorphically grown ultraviolet C photopumped lasers on bulk AlN substrates
Optically pumped ultraviolet lasers were fabricated on low-defect density bulk (0001) AlN substrates.
-
Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes
In this paper, the temperature and strain dependence of the polarization of the in-plane electroluminescence of (0001) orientated (In)(Al)GaN multiple quantum well light emitting diodes in the ultraviolet spectral range has been investigated.
-
Towards Sub-300 nm laser diodes on bulk AlN substrates
In this presentation, we report recent progress on development towards sub-300 nm lasers diodes by using high-quality bulk AlN substrates.
-
Towards Sub-300 nm AlGaN Laser Diodes on Bulk AlN Substrates
We report recent progress on the development towards sub-300 nm laser diodes.