Future Concepts division- publications

We illustrate the role of appropriation in the design of a recently deployed system for organizational information sharing.

In this paper, recent progress in the development of ultraviolet laser diodes will be reviewed.

We present UV LEDs operating at wavelengths below 300 nm.

The crystal structure of poly(3-hexylthiophene) (P3HT) has been studied by first-principles calculations based on density functional theory.

An optical detection technique termed spatially modulated fluorescence emission is described that delivers high signal-to-noise discrimination without precision optics to enable a flow cytometer that can combine high performance, robustness,…

Here memristive metal/oxide/metal junctions were patterned by inkjet printing, and the printed device characteristics were measured to infer ionic and electronic transport parameters such as mobilities and ion distribution.

In this talk, I will discuss the development integrated sensing systems to illustrate and demonstrate the challenges and advantages of using solution-processed electronic materials for flexible applications.

We have investigated different photolithographically defined anti-wetting materials to form the surface energy pattern, including an alkyl functionalized polysilsesquioxane (PSSQ), and perfluoropolymers such as polytetrafluoroethylene (PTFE).

This paper describes the application of a novel hydrodynamic separation method for continuous flow recovery of magnetic particles from ferrofluids and MR fluids.

In order to achieve more timely assessment of water quality, PARC is developing a compact and robust platform for rapid pathogen identification and quantitation in water.

In this paper we present experimental results incorporating traditional amorphous silicon (a-Si) photovoltaic devices with a three-dimensional, disordered nanowire (NW) mat using approaches that are compatible with current large area…

We have developed an oxide growth process for a top-gate transistor architecture for organic thin film semiconductors based on the ALD process, plasma-enhanced as well as thermal.