Quantum publications

Sub-300nm optically pumped ultraviolet lasers were realized on low-defect-density (0001) AlN substrates fabricated from single crystalline AlN boules.

In this presentation, we report recent progress on the development towards sub-300 nm laser diodes by using high-quality bulk AlN substrates.

We describe recent progress on the development of sub-300 nm lasers at the Palo Alto Research Center (PARC).

Experimental results are presented that illustrate the phenomenon for nitride LEDs grown on sapphire and on bulk AlN.

In this paper, the temperature and strain dependence of the polarization of the in-plane electroluminescence of (0001) orientated (In)(Al)GaN multiple quantum well light emitting diodes in the ultraviolet spectral range…

In this presentation, we report recent progress on development towards sub-300 nm lasers diodes by using high-quality bulk AlN substrates.

In-well pumping of blue InGaN/GaN vertical-external-cavity surface-emitting lasers are demonstrated.

In this paper, we review a silicon photonic macrochip system and its associated packaging that will allow dense wavelength division multiplexed optical links to be intimately integrated and comanufactured with…

This paper reviews semi-polar nitride surfaces from a theoretical and experimental perspective with regard to light emitting device applications.

Epitaxial lateral overgrowth (ELOG) is reported for semi-polar (Al,Ga)N(11.2) layers on GaN/m-sapphire templates.