Triple-Axis X-Ray Reciprocal Space Mapping of InyGa1−yAs Thermophotovoltaic Diodes Grown on (1 0 0) InP Substrates

Abstract

Analysis of the composition, strain-relaxation, layer-tilt, and the crystalline quality of In_yGa_1−yAs/InP_1−xAs_x thermophotovoltaic (TPV) diodes grown by metal-organic vapor phase epitaxy (MOVPE) is demonstrated using triple-axis X-ray reciprocal space mapping techniques. In_0.53Ga_0.47As (E_gap=0.74 eV) n/p junction diodes are grown lattice matched (LM) to InP substrates and lattice-mismatched (LMM) In_0.67Ga_0.33As (E_gap=0.6 eV) TPV diodes are grown on three-step InP_1−xAs_x (0<x<0.32) buffer layers on InP substrates. X-ray reciprocal space maps about the symmetric (4 0 0) and asymmetric (5 3 3) reciprocal lattice points (RELPs) determine the in-plane and out-of-plane lattice parameters and strain of the In_yGa_1−yAs TPV active layer and underlying InP_1−xAs_x buffers. Triple-axis X-ray rocking curves about the LMM In_0.67Ga_0.33As RELP show an order of magnitude increase of its full-width at half-maximum (FWHM) compared to that from the LM In_0.53Ga_0.47As (250 vs. 30 arcsec). Despite the significant RELP broadening, the photovoltaic figure of merits show that the electronic quality of the LMM In_0.67Ga_0.33As approaches that of the LM diode material. This indicates that misfit-related crystalline imperfections are not dominating the photovoltaic response of the optimized LMM In_0.67Ga_0.33As material compared with the intrinsic recombination processes and/or recombination through native point defects, which would be present in both LMM and LM diode material. However, additional RELP broadening in non-optimized LMM In_0.67Ga_0.33As n/p junction diodes does correspond to significant degradation of TPV diode open-circuit voltage and minority carrier lifetime demonstrating that there is correlation between X-ray FWHM and the electronic performance of the LMM TPV diodes.