August 31, 2008

High gain amplifiers with amorphous silicon thin film transistors

Citation

Sambandan, S. High gain amplifiers with amorphous silicon thin film transistors. IEEE Electron Device Letters. 2008 August; 29 (8): 882.

Abstract

This letter demonstrates amplifier design with amorphous hydrogenated silicon (a-Si:H) thin film transistors (TFTs) for high dc gain. High dc gain is achieved by the use of positive feedback to improve load impedance. The transfer characteristics of the amplifier are resistant to threshold voltage shift in the TFTs.

Read more from SRI

November 20, 2024

SRI and University of Houston receive $3.6M to develop a microreactor to convert carbon dioxide to methanol using renewable energy

By recycling carbon dioxide into methanol, this science supports U.S. climate goals and helps reduce greenhouse gases.
November 18, 2024

Teaching machines to learn like humans could help autonomous systems deal with unfamiliar environments

SRI is spearheading a way for autonomous systems, such as self-driving vehicles and drones, to effectively operate in evolving and adversarial environments such as war zones.
November 13, 2024

Office of Special Education Programs extends SRI’s funding for the Center for IDEA Early Childhood Data Systems

The U.S. Department of Education issues a third five-year cooperative agreement to SRI to lead The DaSy Center.

High gain amplifiers with amorphous silicon thin film transistors

Abstract

Read more from SRI

SRI and University of Houston receive $3.6M to develop a microreactor to convert carbon dioxide to methanol using renewable energy

Teaching machines to learn like humans could help autonomous systems deal with unfamiliar environments

Office of Special Education Programs extends SRI’s funding for the Center for IDEA Early Childhood Data Systems